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| SKiM 120GD176D Absolute Maximum Ratings Symbol Conditions IGBT Values Units SKiM(R) 4 IGBT Modules SKiM 120GD176D Preliminary Data Inverse diode Characteristics Symbol Conditions IGBT min. typ. max. Units Features Typical Applications Inverse diode Thermal characteristics Temperature Sensor Mechanical data GD 1 24-10-2006 RAA (c) by SEMIKRON SKiM 120GD176D Fig. 1 Output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Turn-on /-off energy = f (IC) Fig. 4 Turn-on /-off energy = f (RG) Fig. 5 Transfer characteristic Fig. 6 Gate charge characteristic 2 24-10-2006 RAA (c) by SEMIKRON SKiM 120GD176D Fig. 7 Switching times vs. IC Fig. 8 Switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT ZthJC = f (tp); D = tp/tc = tp * f Fig. 10 Transient thermal impedance of inverse diodes IGBT ZthJC = f (tp); D = tp/tc = tp * f Fig. 11 CAL diode forward characteristic, incl. RCC'+ EE' Fig. 12 CAL diode peak reverse recovery current 3 24-10-2006 RAA (c) by SEMIKRON SKiM 120GD176D Fig. 13 Typ. CAL diode recovered charge Dimensions in mm This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 24-10-2006 RAA (c) by SEMIKRON |
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